Everspin Enters Pilot Production Phase for the World’s First 28 nm 1 Gb STT-MRAM Component
New component expands Everspin’s industry-leading STT-MRAM product family and enables new possibilities for customers with its higher density and DDR4-based interface
CHANDLER, Ariz.–(BUSINESS WIRE)–Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced it has completed development activity and entered the pilot production phase of its 28 nm 1-Gigabit (Gb) Spin Torque Transfer Magnetoresistive Random Access Memory (STT-MRAM) product. Everspin has been in volume production of its 256 Mb STT-MRAM product for more than a year and now adds the ground-breaking 1 Gb capacity product to its lineup, extending Everspin’s leadership in STT-MRAM memory component manufacturing.
@EverspinTech Enters Pilot Production Phase for the World’s First 28 nm 1 Gb #STT-MRAM Component
Everspin’s STT-MRAM devices enable enterprise infrastructure and data center providers to increase the reliability and performance of systems where high-performance data persistence is critical by delivering protection against power loss without the use of supercapacitors or batteries. In addition, the larger density 1 Gb part offers more effective management of I/O streams, creating a greater level of latency determinism and allowing storage OEMs to significantly improve quality of service of their products. Similar benefits can also be achieved using the 1 Gb STT-MRAM device as a persistent data buffer in storage and fabric accelerators, computational storage, and other applications.
“The Everspin team has executed extremely well on completing development of our ground-breaking 1 Gb STT-MRAM devices. This is yet another bellwether milestone on STT-MRAM’s march into larger market opportunities delivering a significant increase in density over our previous 256 Mb parts coupled with the more mainstream DDR4-based interface,” said Kevin Conley, Everspin’s President and CEO. “We are also pleased that progress with both customer qualification and yield maturity continues to be on track with volume production expected to start in the third quarter.”
Everspin’s 1 Gb product family includes both 8-bit and 16-bit DDR4 compatible (ST-DDR4) interface versions of the device and are available in a JEDEC-compliant BGA package.
About Everspin Technologies
Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in the design, volume production and distribution of Magnetoresistive RAM (MRAM) into markets and applications where data persistence, performance, and endurance are paramount. Serving applications across the data center, industrial, and transportation markets, Everspin has built the strongest and fastest-growing foundation of MRAM users in the world. For more information, visit www.everspin.com. NASDAQ: MRAM.
Cautionary Statement Regarding Forward-Looking Statements
This press release contains forward-looking statements regarding future events that involve risks and uncertainties that could cause actual results or events to differ materially from the expectations disclosed in the forward-looking statement, including, but not limited to; the anticipated market adoption of Everspin’s products and technology at the rate Everspin expects; the ability for Everspin to expand the markets Everspin addresses at the rate it expects; the risk that unexpected technical difficulties may develop in the final stages of development or production of its products, or when Everspin’s customers may ship in volume. Readers are advised that they should not place undue reliance on these forward-looking statements and should review the risk factors included in Everspin’s Form 10-Q filed with the Securities and Exchange Commission on May 9, 2019, under the caption “Risk Factors.” Subsequent events may cause these expectations to change, and Everspin disclaims any obligations to update or alter these forward-looking statements in the future, whether as a result of new information, future events or otherwise.